NCE N-Channel Enhancement Mode Power MOSFET 

 

DESCRIPTION 

 

The NCE8580 uses advanced trench technology and design to 

provide excellent RDS(ON) with low gate charge. This device is 

suitable for use in PWM, load switching and general purpose 

applications. 

 

 

 

GENERAL FEATURES 

 

● VDS =85V,ID =80A 

 

RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ) 

 

 

 

● High density cell design for ultra low Rdson 

 

● Fully characterized Avalanche voltage and current 

 

● Special designed for Convertors and power controls 

 

● Good stability and uniformity with high EAS 

 

● Excellent package for good heat dissipation 

 

● Special process technology for high ESD capability